FIB / (E)SEM Dual Beam Microscope Quanta 3D FEG

The Quanta 3D FEG is a combined scanning electron / focused ion beam microscopy (SEM and FIB, respectively) with variable operation in high-, low- (10 – 130 Pa) and extended low-vacuum (up to 4000 Pa), summarized in the term environmental SEM (ESEM). This installation is optimized for additive direct-write fabrication of functional micro- and nanostructures using focused ion / electron beam induced deposition (FIBID / FEBID) with particular focus on 3D nano-printing. FIB processing down to 2 kV and 1 pA is also available, which complements rapid prototyping for a broad range of materials not least due to the low- and environmental-vacuum options. Furthermore, the system is equipped with micro- / nano-manipulation devices and allows installation of low- and high-temperature stages (5° – 800 °C). In near future, the system will be expanded by an in situ atomic force microscope (AFSEM® by GETec Microscopy Inc., Vienna, Austria) to enable correlated microscopy by combining the individual capabilities of the microscope for a comprehensive insight in materials and functionalities down to the nanoscale.

Key Features

• Dual beam conception for (simultaneous) electron and ion beam processing
• High resolution imaging via both beams (SEM / FIB)
• Additive direct-write fabrication of electrically conductive / insulating, magnetic or optically active micro- and nanostructures via focused electron / ion beam induced deposition (FEBID / FIBID)
• Particular focus on direct-write 3D nano-printing via FEBID / FIBID
• Subtractive fabrication of micro- and nanostructures via FIB processing
• Low temperature processing using a peltier stage (down to ~ 5°C)
• High temperature processing using heating MEMS (up to 800°C)
• Micro- and nano-manipulation option
• In situ AFM for correlated microscopy (3D morphology and specific functionality)

Essential Specifications

Emitter & Resolution

• SEM
  • Type: thermal field emission gun (FEG)
  • Primary electron energies: 0.5 keV – 30 keV
  • Beam currents: 0.7 pA – 5 µA
  • Resolution:
    • 2 nm @ 30 keV
    • 5 nm @ 30 keV (low-vacuum mode)
    • 5 nm @ 30 keV (extended low-vacuum mode)
    • 9 nm @ 1 keV
    • 9 nm @ 3 keV (low-vacuum mode)
  • FIB
    • Type: Ga⁺ liquid ion metal source (LIMS)
    • Primary ion energies: 2 kV – 30 kV
    • Beam currents: 1 pA – 65 nA
    • Resolution: < 7 nm @ 30 kV (eucentric)

Additive / Subtractive Manufacturing

• 4 fixed gas injection systems, providing deposition of Pt, Au, Fe and SiO₂
• 1 variable gas injection system (Kleindiek) for precursor testing including the possibility of external carrier gas injection
• FEBID performance (additive)
  • Minimum line widths < 13 nm (FWHM) at heights of 20 nm (for Pt on Si)
  • Freestanding 3D architectures with minimum feature widths < 30 nm (for Au)
• FIBID performance (additive)
  • Minimum line widths < 40 nm (for Pt on Si)
  • Freestanding 3D architectures with minimum feature widths < 70 nm (for Pt)
• FIB performance (subtractive)
  • < 15 nm line width
  • ~ 20:1 height:width ratio

Detectors & Stage & Add-Ons

• Everhart Thornley SE / BSE Detector (latter via grid voltages)
• Embedded sample current measurements (software integrated & external)
• XYZ stage movement: 50 mm / 50 mm / 25 mm
• Rotation: 360° (continuous) with < 1 µm repeatability
• Tilt: -15° – 75° (ion beam tilted 52° w.r.t. electron beam)
• Micromanipulation (Kleindiek)
  • Electric nanoprobing
  • Nanomanipulation (movement / transfer)
  • Rotation needle option
  • Nano-grabber option
• Low temperature stage
  • Peltier element (40×40 mm)
  • Operation range 5 °C – 40 °C
• High temperature stage
  • Chip holder for DensSolution heating chips
  • Operation temperatures up to 800°C
  • Active closed loop operation including temperature profile option